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May 2011
FDB86102LZ
N-Channel PowerTrench ? MOSFET
100 V, 30 A, 24 m Ω
Features
Max r DS(on) = 24 m Ω at V GS = 10 V, I D = 8.3 A
Max r DS(on) = 35 m Ω at V GS = 4.5 V, I D = 6.8 A
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
DC-DC conversion
Fast switching speed
Inverter
100% UIL Tested
Synchronous Rectifier
RoHS Compliant
D
D
G
S
TO-263AB
G
FDB Series
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
S
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
±20
Units
V
V
Drain Current
-Continuous(Package limited)
T C = 25 °C
30
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C (Note 1a)
40
8.3
A
-Pulsed
50
E AS
Single Pulse Avalanche Energy
(Note 3)
121
mJ
P D
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
3.1
2
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
1.9
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB86102LZ
Device
FDB86102LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24 mm
Quantity
800 units
?2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
1
www.fairchildsemi.com
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